Electron-tunneling dynamics through a double-barrier structure in the presence of phonons.

Electron-tunneling dynamics through a semiconductor double-barrier structure in the presence of plane-wave phonons is investigated by directly solving the time-dependent Schrodinger equation. The temporal profile of tunneling current density due to an electron wave packet incident at the resonant energy channel E„ is calculated at different lattice temperatures. The magnitude of the tunneling current density is shown to decrease in the presence of the electron-phonon interaction, which is attributed to an increase in the reflected current. The calculated tunneling peak current density is shown to decrease with temperature and is compared with available experimental data.